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AM29F080B-90EI - Advanced Micro Devices - 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

Categories Flash Memory IC Chip
Place of Origin: PHILIPPINE
Brand Name: Advanced Micro Devices
Certification: Lead free / RoHS Compliant
Model Number: AM29F080B-90EI
MOQ: 50
Price: Contact for Sample
Packaging Details: Contact for Sample
Delivery Time: Within 3days
Payment Terms: T/T in advance, Paypal, Western Union
Supply Ability: 5000
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AM29F080B-90EI - Advanced Micro Devices - 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory


Quick Detail:


8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory


Description:


The Am29F080B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F080B is offered in 40-pin TSOP and 44-pin SO packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

This device is manufactured using AMD’s 0.35 µm process technology, and offers all the features and benefits of the Am29F080, which was manufactured using 0.5 µm process technology.

The standard device offers access times of 70, 90, 120, and 150 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls.

The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment.

The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.

The system can place the device into the standby mode. Power consumption is greatly reduced in this mode.

AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowl e r-Nordheim tunneling. The data is programmed using hot electron injection.


Applications:


■ 5.0 V ± 10%, single power supply operation

— Minimizes system level power requirements

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F080 device

■ High performance

— Access times as fast as 70 ns

■ Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

— 1 µA typical standby current (standard access time to active mode)

■ Flexible sector architecture

— 16 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

— Group sector protection:

A hardware method of locking sector groups to prevent any program or erase operations within that sector group

Temporary Sector Group Unprotect allows code changes in previously locked sectors

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies bytes at specified addresses

■ Minimum 1,000,000 program/erase cycles per sector guaranteed

■ Package options

— 40-pin TSOP

— 44-pin SO

■ Compatible with JEDEC standards

— Pinout and software compatible with single-power-supply Flash standard

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Provides a hardware method for detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Resets internal state machine to the read mode


Specifications:


part no.

AM29F080B-90EI

Manufacturer

Advanced Micro Devices

supply ability

10000

datecode

10+

package

TSOP

remark

new and original stock


Competitive Advantage:


Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .


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