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...-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 °C Tstg Storage Temperature -55-150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise
...-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 °C Tstg Storage Temperature -55-150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise more
Brand Name:Original Brand
Model Number:2SD822 / D822
Place of Origin:CN
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Product Listing: ADRV9026BBCZ RF Power Transistors Description: The ADRV9026BBCZ RF power transistor is a high-performance, high-efficiency device for use in high-power amplifier and linear applications. This product is designed to deliver high levels of ...
Product Listing: ADRV9026BBCZ RF Power Transistors Description: The ADRV9026BBCZ RF power transistor is a high-performance, high-efficiency device for use in high-power amplifier and linear applications. This product is designed to deliver high levels of ... more
Brand Name:Analog Devices Inc.
Model Number:ADRV9026BBCZ
Place of Origin:Multi-origin
ADRV9026BBCZ Integrated Circuit ICs 50V 2.3GHz Bandwidth 11dB Gain
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Good quality Electronic Component provider from China——GS Electronics, Product Description: The ADUM1250ARZ is a highly versatile and reliable digital isolator designed to provide enhanced safety and noise immunity for a wide range of applications. With...
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... l Fast Switching l Fully Avalanche Rated Key Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with
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... 4A SOT23-3L -30V, -4A, P-channel MOSFET Diodes and Rectifiers The AO3401A/L uses advanced trench technology to provideexcellent RDS(ON) , low gate charge and operation gatevoltages as low as 2.5V. This device is suitable for use as aload ...
... 4A SOT23-3L -30V, -4A, P-channel MOSFET Diodes and Rectifiers The AO3401A/L uses advanced trench technology to provideexcellent RDS(ON) , low gate charge and operation gatevoltages as low as 2.5V. This device is suitable for use as aload ... more
Brand Name:original
Model Number:AO3401A
Minimum Order Quantity:discussible
IC AO3401A Integrated Circuit Module SOT-23 AO34 Lead Free
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...Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced...
...Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced... more
Brand Name:IR
Model Number:IRLR2905TRPBF
Place of Origin:TAIWAN
IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics
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EPM7256AETI144-7N (In stock) EPM7256AETI144-7N 144-TQFP (20x20) integrated circuitIC CPLD 256MC 7.5NS 144TQFP To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging services will be provided...
EPM7256AETI144-7N (In stock) EPM7256AETI144-7N 144-TQFP (20x20) integrated circuitIC CPLD 256MC 7.5NS 144TQFP To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient packaging services will be provided... more
Brand Name:Intel/Altera
Model Number:EPM7256AETI144-7N
Place of Origin:original
EPM7256AETI144-7N Ic Integrated Circuit 144-TQFP (20x20) CPLD 256MC 7.5NS
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... using advanced and innovative 3rd generation SiC MOSFET technology. Specification Of SCT070HU120G3AG Part Number: SCT070HU120G3AG Total Power Dissipation At TC = 25 °C: 223W Storage Temperature Range: -55 °C To 175 °C Thermal Resistance, Junction-To
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Product Description: Integrated Circuitry IC is a versatile and robust integrated electronic circuit designed for a wide range of consumer audio applications. It features an I²C interface, a 32-SSOP-A device package, and an operating temperature range of -...
Product Description: Integrated Circuitry IC is a versatile and robust integrated electronic circuit designed for a wide range of consumer audio applications. It features an I²C interface, a 32-SSOP-A device package, and an operating temperature range of -... more
Brand Name:Lumissil
Model Number:IS32LT3168-GRLA3-TR
Place of Origin:USA
2-Channel Integrated Circuitry Optimal Solution for Consumer Audio Applications
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... Circuits - ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...
... Circuits - ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ... more
Package ::DIP
Product Category ::semiconductors-Integrated Circuits - ICs
Manufacturer ::ASI / Advanced Semiconductor, Inc.
MT5C1005C-25/883C
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components... more
Brand Name:Mitsubishi Electric Semiconductor
Model Number:2SC1971
Place of Origin:CHINA
2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers
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MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel MMBF5484 patch SOT23 silkscreen 6B N-junction FET low noise audio signal amplifier transistor Manufacturer: onsemi Product Category: RF JFET Transistors RoHS: Details Transistor Type: JFET ...
MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel MMBF5484 patch SOT23 silkscreen 6B N-junction FET low noise audio signal amplifier transistor Manufacturer: onsemi Product Category: RF JFET Transistors RoHS: Details Transistor Type: JFET ... more
Brand Name:ON
Model Number:MMBF5484
Place of Origin:ON
MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel
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2SC2099 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2099 C2099 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...
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...Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic...
...Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic... more
Brand Name:NEC
Model Number:2SB1261
Place of Origin:CHINA
2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor
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2SC2078 NPN Epitaxial Planar Silicon Transistor Specifications : Absolute Maximum Ratings at Ta = 25˚C Parameters Symbols Ratings Collector-to-Base Voltage VCBO 80V Collector-to-Emitter Voltage VCER 75V Emitter-to-Base Voltage VEBO 5V Collector Current IC ...
2SC2078 NPN Epitaxial Planar Silicon Transistor Specifications : Absolute Maximum Ratings at Ta = 25˚C Parameters Symbols Ratings Collector-to-Base Voltage VCBO 80V Collector-to-Emitter Voltage VCER 75V Emitter-to-Base Voltage VEBO 5V Collector Current IC ... more
Brand Name:Sanyo
Model Number:2SC2078
Place of Origin:Shenzhen, China
2SC2078 Epitaxial Planar NPN Transistor Silicon Material High Performance
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( Electronic Components ) New AP2602GY-HF integrated circuits Description AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the ...
( Electronic Components ) New AP2602GY-HF integrated circuits Description AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the ... more
Brand Name:Original
Model Number:AP2602GY-HF
Place of Origin:China
AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator