...RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 170 mA Rds On - Drain-Source ...
...RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 170 mA Rds On - Drain-Source ... more
BSS123LT1G MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 170mA (...
BSS123LT1G MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 170mA (... more
...MFG channel. 2. We had our own More than 8000+ Different Parts stock (20% rare/obsolete +80% regular parts ) to serve our clients globally. 3. We had our own Quality evaluation system to ensure our provided parts ...
...MFG channel. 2. We had our own More than 8000+ Different Parts stock (20% rare/obsolete +80% regular parts ) to serve our clients globally. 3. We had our own Quality evaluation system to ensure our provided parts ... more
