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  • China N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits wholesale
    General Description: The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ... more
    Brand Name:JEUNKEI
    Model Number:JY11M
    Place of Origin:China

    N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

  • China JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System wholesale
    JY11M N Channel Enhancement Mode Power MOSFET By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence of these attributes renders this design exceptionally efficient and dependable for power... more
    Brand Name:JUYI
    Model Number:JY11M
    Place of Origin:China

    JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

  • China High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ wholesale
    High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... more
    Brand Name:ONSEMI
    Model Number:NVMS5P02
    Place of Origin:China

    High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

  • China FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V wholesale
    FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive ... more
    Brand Name:onsemi
    Model Number:FDS86267P
    Place of Origin:original

    FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V

  • China JUYI 500V/8A N Channel Enhancement Mode Power MOSFET wholesale
    ...Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power... more
    Brand Name:JUYI
    Model Number:JY8N5M
    Place of Origin:China

    JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

  • China AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET wholesale
    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit... more
    Model Number:AP4511GD
    Place of Origin:original factory

    AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

  • China NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET wholesale
    NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET more
    Brand Name:Hua Xuan Yang
    Model Number:NCE01P18D
    Place of Origin:ShenZhen China

    NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

  • China Integrated Circuit Chip AP4953GM P Channel Enhancement Mode Power Mosfet wholesale
    INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new... more
    Brand Name:APEC
    Model Number:AP4953GM
    Place of Origin:Original Factory

    Integrated Circuit Chip AP4953GM P Channel Enhancement Mode Power Mosfet

  • China AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET wholesale
    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer wit... more
    Brand Name:Anterwell
    Model Number:AP4511GD
    Place of Origin:original factory

    AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China SRF6S19140HS N-Ch Enhancement Mode Power MOSFET MOTOROLA RF Power Transistors wholesale
    SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ... more
    Brand Name:MOTOROLA
    Model Number:SRF6S19140HS
    Place of Origin:MALAYSIA

    SRF6S19140HS N-Ch Enhancement Mode Power MOSFET MOTOROLA RF Power Transistors

  • China 95T07GP AP95T07GP Transistor N-Channel Enhancement Mode Power Mosfet Transistor TO-220 Original wholesale
    Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ... more
    Brand Name:Original
    Model Number:AP95T07GP
    Place of Origin:US

    95T07GP AP95T07GP Transistor N-Channel Enhancement Mode Power Mosfet Transistor TO-220 Original

  • China GaN IC IGLR60R340D1XUMA1 600V CoolGaN Enhancement Mode Power Transistor wholesale
    ...Enhancement Mode Power Transistor Product Description Of IGLR60R340D1XUMA1 IGLR60R340D1XUMA1 is 600V CoolGaN Enhancement Mode Power Transistor. Specification Of IGLR60R340D1XUMA1 Vgs(th) (Max) @ Id 1.6V @ 530µA Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V Power... more
    Brand Name:Original Factory
    Model Number:IGLR60R340D1XUMA1
    Place of Origin:CN

    GaN IC IGLR60R340D1XUMA1 600V CoolGaN Enhancement Mode Power Transistor

  • China MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral wholesale
    MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ... more
    Brand Name:Freescale
    Model Number:MRF6V2150NBR1
    Place of Origin:USA

    MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET wholesale
    IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • ... more
    Brand Name:IXYS
    Model Number:IXFK27N80Q
    Place of Origin:Original Factory

    IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

    Shenzhen Retechip Electronics Co., Ltd
    [Guangdong,China]
  • China FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A wholesale
    ...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power... more
    Brand Name:FORTUNE
    Model Number:FS8205A
    Place of Origin:TAIWAN

    FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

  • China SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs wholesale
    ...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High speed switch Low power DC to DC converter. andnbsp; Description N-channel enhancement mode... more
    Brand Name:NXP Semiconductors
    Model Number:SI2304DS,215
    Place of Origin:China

    SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs

  • China DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006 wholesale
    DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ... more
    Brand Name:Diodes
    Model Number:DMN26D0UFB4-7
    Place of Origin:UAS

    DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006

    Eastern Stor International Ltd.
    [Guangdong,China]
  • China Electronic Components Rf Power Mosfet Transistors STPS15L30C-TR STS1DNC45 STV6419AG wholesale
    Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • ... more
    Brand Name:ST
    Model Number:STPS15L30C-TR STS1DNC45 STV6419AG
    Place of Origin:Original

    Electronic Components Rf Power Mosfet Transistors STPS15L30C-TR STS1DNC45 STV6419AG

    Shenzhen Weitaixu Capacitor Co.,Ltd
    [Guangdong,China]
  • China IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A wholesale
    ...Power Mosfet Hiperfet TO-264 300V 140A Space Savings N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = 300V I D25= 140A RDS(on)≤24mΩ DS99557F(5/08)trr≤200ns Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages z Easy to mount z Space savings z High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power more
    Brand Name:IXYS
    Model Number:IXFK140N30P
    Place of Origin:Germany

    IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
  • China SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR wholesale
    SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source ... more
    Description:SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
    Stock:200PCS
    Minimum Order Quantity:1pcs

    SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
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