-
High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...
High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... more
Brand Name:ONSEMI
Model Number:NVMS5P02
Place of Origin:China
-
FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive ...
-
...Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power...
...Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power... more
Brand Name:JUYI
Model Number:JY8N5M
Place of Origin:China
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
-
...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel...
...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel... more
Brand Name:Anterwell
Model Number:AP4511GD
Place of Origin:original factory
AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-
...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel...
...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel... more
Model Number:AP4511GD
Place of Origin:original factory
AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-
INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new...
INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new... more
Brand Name:APEC
Model Number:AP4953GM
Place of Origin:Original Factory
Integrated Circuit Chip AP4953GM P Channel Enhancement Mode Power Mosfet
-
NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET
-
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details more
Brand Name:JUYI
Model Number:JY8N5M
Place of Origin:China
JY8N5M N Channel Enhancement Mode Power MOSFET For Switch Mode Power Supply
-
Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new and original stock Competitive Advantage: Warranty :180 days ! Free shipping: Order ove...
Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new and original stock Competitive Advantage: Warranty :180 days ! Free shipping: Order ove... more
Brand Name:APEC
Model Number:AP4953GM
Certification:ROHS COMPLIANT
Integrated Circuit Chip AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...
-
General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...
-
...IGLR60R190D1XUMA1 N-Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power Transistor. Specification Of IGLR60R190D1XUMA1 Product Status Active FET Type N-Channel ...
...IGLR60R190D1XUMA1 N-Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power Transistor. Specification Of IGLR60R190D1XUMA1 Product Status Active FET Type N-Channel ... more
Brand Name:Original Factory
Model Number:IGLR60R190D1XUMA1
Place of Origin:CN
GaN IC IGLR60R190D1XUMA1 N-Channel 600V Enhancement Mode Power Transistor
-
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ...
-
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • ...
-
...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...
...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power... more
Brand Name:FORTUNE
Model Number:FS8205A
Place of Origin:TAIWAN
FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
-
...Channel 20V 3.7A MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High speed switch Low power DC to DC converter. andnbsp; Description N-channel enhancement mode...
-
... MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of channels: 1 Channel ...
... MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of channels: 1 Channel ... more
Brand Name:Diodes
Model Number:DMN26D0UFB4-7
Place of Origin:UAS
DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006
-
... N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type...
... N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type... more
Brand Name:Vishay Semiconductor
Model Number:SIHF10N40D-E3
Minimum Order Quantity:1 piece
N Channel Transistor Discrete Semiconductor Devices SIHF10N40D-E3 Power Mosfets
-
...Power Mosfet Hiperfet TO-264 300V 140A Space Savings N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = 300V I D25= 140A RDS(on)≤24mΩ DS99557F(5/08)trr≤200ns Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages z Easy to mount z Space savings z High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power
...Power Mosfet Hiperfet TO-264 300V 140A Space Savings N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = 300V I D25= 140A RDS(on)≤24mΩ DS99557F(5/08)trr≤200ns Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages z Easy to mount z Space savings z High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power more
Brand Name:IXYS
Model Number:IXFK140N30P
Place of Origin:Germany
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A
-
SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ...
SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ... more
Description:SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Stock:200PCS
Minimum Order Quantity:1pcs
SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR