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DDR SDRAM K4B4G1646E-BYMA K4B4G1646E-BYMA Manufacturer Samsung MFR.Part #K4B4G1646E-BYMA JLCPCB Part #C500275 PackageFBGA-96 DescriptionFBGA-96 DDR SDRAM ROHS Datasheet Download SourceJLCPCB Assembly Type SMT Assembly CAD ModelPCB Footprint or Symbol ...
DDR SDRAM K4B4G1646E-BYMA K4B4G1646E-BYMA Manufacturer Samsung MFR.Part #K4B4G1646E-BYMA JLCPCB Part #C500275 PackageFBGA-96 DescriptionFBGA-96 DDR SDRAM ROHS Datasheet Download SourceJLCPCB Assembly Type SMT Assembly CAD ModelPCB Footprint or Symbol ... more
Brand Name:SAMSUNG
Model Number:K4B4G1646E-BYMA
Place of Origin:KOREAN
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...DDR SDRAM Socket Details : 200 Position SODIMM DDR SDRAM Socket Surface Mount, 25° Angle Description: CONN SKT SODIMM 200POS SMD IC Category Connectors, Interconnects Series Memory Connectors - Inline Module Sockets MFG TE Connectivity AMP Connectors Part number 1-1473005-1 Package Tray Part Status Active Connector Style SODIMM Number of Positions 200 Memory Type DDR
...DDR SDRAM Socket Details : 200 Position SODIMM DDR SDRAM Socket Surface Mount, 25° Angle Description: CONN SKT SODIMM 200POS SMD IC Category Connectors, Interconnects Series Memory Connectors - Inline Module Sockets MFG TE Connectivity AMP Connectors Part number 1-1473005-1 Package Tray Part Status Active Connector Style SODIMM Number of Positions 200 Memory Type DDR more
Brand Name:TE Connectivity AMP Connectors
Model Number:1-1473005-1
Place of Origin:China
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MT29PZZZ8D5WKFMW-18W.6D - 1GB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29PZZZ8D5WKFMW-18W.6D is a 1GB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of ...
MT29PZZZ8D5WKFMW-18W.6D - 1GB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29PZZZ8D5WKFMW-18W.6D is a 1GB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of ... more
Brand Name:Micron Technology
Model Number:MT29PZZZ8D5WKFMW-18W.6D
Certification:ROHS
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...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR...
...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR... more
Brand Name:Anterwell
Model Number:MT46V8M16
Place of Origin:original factory
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...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR...
...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR... more
Model Number:MT46V8M16
Place of Origin:original factory
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H5AN8G6NCJR-VKC Memory IC Chip Synchronous Dynamic Random Access Memory FBGA96 DDR SDRAM [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
H5AN8G6NCJR-VKC Memory IC Chip Synchronous Dynamic Random Access Memory FBGA96 DDR SDRAM [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... more
Brand Name:Original Factory
Model Number:H5AN8G6NCJR-VKC
Place of Origin:CN
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Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No DRAM Type DDR SDRAM Chip Density (bit) 256M Organization 16Mx16 Number of Internal Banks 4 Number of Words per Bank 4M Number of Bits/Word (bit) ...
Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No DRAM Type DDR SDRAM Chip Density (bit) 256M Organization 16Mx16 Number of Internal Banks 4 Number of Words per Bank 4M Number of Bits/Word (bit) ... more
Brand Name:MICRON
Model Number:MT46V16M16P-75:F
Place of Origin:CHINA
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SPECIFICATION P/N 009-0019311 Brand NCR Keyword ATM Machine ATM Parts Used in ATM Machine Delivery time 1-7 working days Shipment by express / sea / air Payment TT / Western Union / Paypal / Money Gram Condition new/ used Warranty 90 days Other service ...
SPECIFICATION P/N 009-0019311 Brand NCR Keyword ATM Machine ATM Parts Used in ATM Machine Delivery time 1-7 working days Shipment by express / sea / air Payment TT / Western Union / Paypal / Money Gram Condition new/ used Warranty 90 days Other service ... more
Brand Name:NCR
Model Number:009-0019311
Place of Origin:China
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...-64 Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz ...
...-64 Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz ... more
Brand Name:Micron Technology Inc.
Model Number:MT41K256M16TW-107 AIT:P
Place of Origin:Multi-origin
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Samsung K4A4G165WF-BCTD FBGA-96 DDR SDRAM Memory IC Memory IC is an integrated circuit that is designed to store data and program code. It typically includes a range of components, such as memory cells, address decoders, and sense amplifiers. Memory IC ...
Samsung K4A4G165WF-BCTD FBGA-96 DDR SDRAM Memory IC Memory IC is an integrated circuit that is designed to store data and program code. It typically includes a range of components, such as memory cells, address decoders, and sense amplifiers. Memory IC ... more
Brand Name:Samsung
Model Number:K4A4G165WF-BCTD
Place of Origin:TH/CN/PH
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MT46V16M16P-5B:K TR 46V16M16 SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP List Of Other Electronic Components In Stock TLE6250PGV33 ...
MT46V16M16P-5B:K TR 46V16M16 SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP List Of Other Electronic Components In Stock TLE6250PGV33 ... more
Brand Name:Micron Technology Inc.
Model Number:MT46V16M16P-5B:K TR
Place of Origin:CHINA
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DDR SDRAM Memory Chip IMD64M16R38AG8GNF Parameters 256 Meg x 4128 Meg x 864 Meg x 16 Configuration 32 Meg x 4 x 8 banks ...
DDR SDRAM Memory Chip IMD64M16R38AG8GNF Parameters 256 Meg x 4128 Meg x 864 Meg x 16 Configuration 32 Meg x 4 x 8 banks ... more
Brand Name:ICMAX
Model Number:IMD64M16R38AG8GNF
Place of Origin:CN
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SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip ...
SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip ... more
Brand Name:Micron Technology Inc.
Model Number:MT46V16M16P-5B:M
Certification:ISO9001
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... specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-...
... specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-... more
Model Number:LP2998MA/NOPB
Minimum Order Quantity:1 pcs
Price:Negotiable
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... device-.Power/Analog IC drive-Control drive IC for portable electronic device;-PDA-Wireless RF-Memory (DDR SDRAM)-Cell phone-Workstation, Server, Video Camera -Desktop PC, Note book PC
... device-.Power/Analog IC drive-Control drive IC for portable electronic device;-PDA-Wireless RF-Memory (DDR SDRAM)-Cell phone-Workstation, Server, Video Camera -Desktop PC, Note book PC more
Brand Name:Horexs
Model Number:HRX
Place of Origin:CHINA
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...SDRAM- PC100 SD 8Mx16-10 FBGA lead free EDS1216GABH-10-E Elpida 20000 booking SD 2Mx8-8 PC125 CL3 TSOP HY57V168010DTC-8 Hynix 3000 3 days SD 8Mx32-PC100 EDS2532AABH-1AR2-E Elpida 100000 booking DDR-400 DDR SDRAM 4M x 32 EM6A9320BI-5MG ETRONTEC 25780 SZ STOCK DDR 64Mx8 PC400 Pb Free MT46V64M8P-5B:F Micron 10000 1 day DDR 64Mx8 PC400 K4H510838G-LCCC Samsung 10000 Stock HK DDR...
...SDRAM- PC100 SD 8Mx16-10 FBGA lead free EDS1216GABH-10-E Elpida 20000 booking SD 2Mx8-8 PC125 CL3 TSOP HY57V168010DTC-8 Hynix 3000 3 days SD 8Mx32-PC100 EDS2532AABH-1AR2-E Elpida 100000 booking DDR-400 DDR SDRAM 4M x 32 EM6A9320BI-5MG ETRONTEC 25780 SZ STOCK DDR 64Mx8 PC400 Pb Free MT46V64M8P-5B:F Micron 10000 1 day DDR 64Mx8 PC400 K4H510838G-LCCC Samsung 10000 Stock HK DDR... more
Model Number:97-0284
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...architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two
...architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two more
Brand Name:Micron Technology Inc.
Model Number:MT46V32M16P-5B:J TR
Minimum Order Quantity:1
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... devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR SDRAM, also known as mDDR (Mobile DDR SDRM), is a communication standard developed by the US JEDEC Solid State Technology Association (JEDEC Solid State Technology Association) for low
... devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR SDRAM, also known as mDDR (Mobile DDR SDRM), is a communication standard developed by the US JEDEC Solid State Technology Association (JEDEC Solid State Technology Association) for low more
Brand Name:SKHYNIX
Model Number:H9HCNNNBPUMLHR- NMO
Place of Origin:KOREA
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...DDR concept. The demand for higher data rates and larger data densities lead to the evolution of SDR into the DDR. In the DDR SDRAM, the data is clocked at both edges – positive as well as negative edge – which results in doubling the data rate. In this way, DDR achieves greater
...DDR concept. The demand for higher data rates and larger data densities lead to the evolution of SDR into the DDR. In the DDR SDRAM, the data is clocked at both edges – positive as well as negative edge – which results in doubling the data rate. In this way, DDR achieves greater more
Brand Name:TOPCBS
Model Number:DDR Socket PCB
Place of Origin:Suzhou China
