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MK60DN512ZVMD10 is a K60 Sub-Family Data Sheet. Part NO: MK60DN512ZVMD10 Brand: FSL Date Code: 11+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products...
MK60DN512ZVMD10 is a K60 Sub-Family Data Sheet. Part NO: MK60DN512ZVMD10 Brand: FSL Date Code: 11+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products... more
Brand Name:FSL
Model Number:MK60DN512ZVMD10
Place of Origin:MALAYSIA
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... • High Efficiency • Low Thermal Resistance Specifications: • Operating Voltage: 6 V • Operating Frequency Range: 400 MHz - 4 GHz • Output Power: 24 dBm • Gain: 22 dB • Noise Figure: 2 dB • Current Consumption: 80 mA • DC Voltage: 3 V •
... • High Efficiency • Low Thermal Resistance Specifications: • Operating Voltage: 6 V • Operating Frequency Range: 400 MHz - 4 GHz • Output Power: 24 dBm • Gain: 22 dB • Noise Figure: 2 dB • Current Consumption: 80 mA • DC Voltage: 3 V • more
Brand Name:Analog Devices Inc.
Model Number:ADF7021BCPZ-RL
Place of Origin:Multi-origin
ADF7021BCPZ-RL RF Power Transistor For High-Speed Data Transmission
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TIP107 Darlington Power Transistors (PNP) complementary silicon power transistors Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: TO-220, Plastic Package Terminals: Solderable...
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... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...
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...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power...
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power... more
Brand Name:Hua Xuan Yang
Model Number:30P06D TO-252
Place of Origin:ShenZhen China
30P06D TO-252 High Power Transistor , Custom Field Effect Transistor
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...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
Brand Name:Hua Xuan Yang
Model Number:4306W-A
Place of Origin:ShenZhen China
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
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IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications... more
Brand Name:onsemi
Model Number:SGL160N60UFD
Place of Origin:Original Factory
UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W
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... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •
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...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... more
Model Number:PBSS4160T,215
Place of Origin:CN
NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... more
Brand Name:original
Model Number:SIHB22N60E-E3
Place of Origin:Original Manufacturer
Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... more
Brand Name:Original
Model Number:FQPF18N60C
Part no.:FQPF18N60C
MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate
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SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate ...
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... Steel Data Sheet , 10mm Stainless Steel Plate For Automotive Exhaust Pipe 409 Stainless Stee Sheet Properties 409 Stainless Steel Data Sheet 409 Stainless Steel Metal Sheet Automotive Exhaust 2D finish cold rolled grade 409L stainless steel sheet price...
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... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall...
... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall... more
Description:MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
Stock:1000PCS
Minimum Order Quantity:1pcs
MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
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2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...
2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;... more
Brand Name:NEC
Model Number:2SC2987
Place of Origin:JAPAN
2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor
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...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... more
Brand Name:INNOTION
Model Number:YP01401650T
Place of Origin:Jiangsu, China
50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power
...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power more
Brand Name:NOVA acoustics
Model Number:MA-4400
Place of Origin:Guangzhou, China
4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors
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...Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...
...Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors... more
Brand Name:onsemi
Model Number:NGTB40N120SWG
Minimum Order Quantity:Negotiable
IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
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...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... more
Brand Name:Diode Triode Transistor
Model Number:TIP137
Place of Origin:USA
TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
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...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor
...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor more
Brand Name:Original
Model Number:IPG20N06S4L14AATMA1
Place of Origin:Original
IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V