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... for various power applications, providing specific electrical characteristics such as collector current (IC), power dissipation (PD), and breakdown voltages (BVCBO, BVCEO). The product line includes standard transistors and Darlington configurations,
... for various power applications, providing specific electrical characteristics such as collector current (IC), power dissipation (PD), and breakdown voltages (BVCBO, BVCEO). The product line includes standard transistors and Darlington configurations, more
Model Number:CENW92
Current - Collector Cutoff:-
Pd - Power Dissipation:2.5W
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...Semiconductor Mosfet Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power...
...Semiconductor Mosfet Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power... more
Brand Name:Hua Xuan Yang
Model Number:15P03C2
Place of Origin:ShenZhen China
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PRF6P21190H is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2 . Part NO: PRF6P21190H Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws ...
PRF6P21190H is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2 . Part NO: PRF6P21190H Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws ... more
Brand Name:MOTOROLA
Model Number:PRF6P21190H
Place of Origin:MALAYSIA
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...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
Brand Name:Hua Xuan Yang
Model Number:4306W-A
Place of Origin:ShenZhen China
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Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom...
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom... more
Brand Name:ON
Model Number:FGH60N60SMD
Place of Origin:Original
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ...
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ... more
Brand Name:ONSEMI
Model Number:MJ15025G
Place of Origin:Mexico
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...Semiconductors Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power
...Semiconductors Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power more
Brand Name:STMicroelectronics
Model Number:STB24N60DM2
Minimum Order Quantity:Negotiable
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ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.9A (Ta), 78A (Tc) Drive Voltage...
ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.9A (Ta), 78A (Tc) Drive Voltage... more
Brand Name:onsemi
Model Number:NTMFS4C55NT1G
Place of Origin:original
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ...
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ... more
Brand Name:ONSEMI
Model Number:MJ15025G
Place of Origin:Mexico
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... more
Brand Name:original
Model Number:SIHB22N60E-E3
Place of Origin:Original Manufacturer
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... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ... more
Brand Name:ST
Model Number:TIP42C
Place of Origin:Original Factory
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New Original Integrated Circuits IC Chip SAK-XC2267-96F80L AC PG-LQFP-100 We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! Okay, here are some...
New Original Integrated Circuits IC Chip SAK-XC2267-96F80L AC PG-LQFP-100 We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! Okay, here are some... more
Brand Name:INFEINEON
Model Number:SAK-XC2267-96F80L AC
Place of Origin:Original Brand
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... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density • more
Brand Name:Original brand
Model Number:IGT60R070D1ATMA1
Place of Origin:Original
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...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... more
Model Number:PBSS4160T,215
Place of Origin:CN
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...Power Transistor / Plastic P Channel Transistor Mosfet Power Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Mosfet Power Transistor Applications High efficiency switch mode power supplies Power...
...Power Transistor / Plastic P Channel Transistor Mosfet Power Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Mosfet Power Transistor Applications High efficiency switch mode power supplies Power... more
Brand Name:JC
Model Number:OSPF18N50C
Place of Origin:Jiangxi, China
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Through Hole TO-247-4 IMZA65R030M1H Discrete Semiconductor MOSFETs Transistors Product Description Of IMZA65R030M1H IMZA65R030M1H device is ideal for battery-powered applications and battery management systems. Specification Of IMZA65R030M1H Part Number: ...
Through Hole TO-247-4 IMZA65R030M1H Discrete Semiconductor MOSFETs Transistors Product Description Of IMZA65R030M1H IMZA65R030M1H device is ideal for battery-powered applications and battery management systems. Specification Of IMZA65R030M1H Part Number: ... more
Brand Name:Original Factory
Model Number:IMZA65R030M1H
Place of Origin:CN
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...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... more
Brand Name:Original
Model Number:FQPF18N60C
Part no.:FQPF18N60C
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..., amplification, or switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings:
..., amplification, or switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: more
Brand Name:Infineon
Model Number:SAK-XC2336B-40F80LR AB
Place of Origin:MX/CN
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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ... more
Description:Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole MJE182G
Stock:In Stock
Minimum Order Quantity:10
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2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...
2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;... more
Brand Name:NEC
Model Number:2SC2987
Place of Origin:JAPAN
