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2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

Categories Electronic IC Chips
Model Number: 2N2646
Certification: Original Factory Pack
Place of Origin: Original
MOQ: 5pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 290PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
Description: Programmable Unijunction Transistor (UJT) 35V 300 mW TO-206AA, TO-18-3 Metal Can
VDGR: 300 V
VGSS: ±30 V
ID: 32 A
Tch: 150 °C
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2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

SILICON UNIJUNCTION TRANSISTORS

Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s.


ABSOLUTE MAXIMUM RATINGS Tj=125°C unless otherwise noted

SymbolRatings

2N2646

2N2647

Unit
VB2EEmitter-Base2 Voltage30V
IeRMS Emitter Current50mA
ie *Peak Pulse Emitter Current2A
VB2BInterbase Voltage35V
PDRMS power Dissipation300mW
TJJunction Temperature-65 to +125°C
TStgStorage Temperature-65 to +150°C

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