| Categories | RF Transistors |
|---|---|
| Brand Name: | Toshiba |
| Model Number: | 2SC5200-O(Q) |
| Place of Origin: | JP |
| MOQ: | 1pcs |
| Price: | Email us for details |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 5000 |
| Delivery Time: | 1day |
| Packaging Details: | Tray |
| Description: | 2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) |
| Stock: | 2000pcs |
| Shipping Method: | LCL, AIR, FCL, Express |
| Date Code: | Newest code |
| Shipping by: | DHL/UPS/Fedex |
| Condition: | New*Original |
| Warranty: | 365days |
| Lead free: | Rohs Compliant |
| Lead times: | Immediately Shipment |
| Package: | TO-3P-3 |
| Mounting Style: | Through Hole |

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole
| Toshiba | |
| Product Category: | Bipolar Transistors - BJT |
| RoHS: | Details |
| Through Hole | |
| TO-3P-3 | |
| NPN | |
| Single | |
| 230 V | |
| 230 V | |
| 5 V | |
| 400 mV | |
| 15 A | |
| 150 W | |
| 30 MHz | |
| - | |
| + 150 C | |
| 2SC | |
| Tray | |
| Brand: | Toshiba |
| Continuous Collector Current: | 15 A |
| DC Collector/Base Gain hfe Min: | 55 |
| DC Current Gain hFE Max: | 160 |
| Height: | 26 mm |
| Length: | 20.5 mm |
| Product Type: | BJTs - Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Width: | 5.2 mm |
| Unit Weight: | 0.239863 oz |
Power Amplifier Applications
• High breakdown voltage: VCEO = 230 V (min)
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage

Specifications



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