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| Total 12533 products from Transformers Manufactures & Suppliers |
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Place of Origin:Original STFI20NK50Z Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 100µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK7C10-75AITE,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP3LN62K3 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 620V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STF2N80K5 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP4N52K3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 525V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP52N25M5 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 5V @ 100µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHH21N60E-T1-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STF20NM65N Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP3NK60ZFP Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 50µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original FDS6975 Specifications Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 32 mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SI4963BDY-T1-E3 Specifications Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 32 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1.4V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original FDS8928A Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 20V Current - Continuous Drain (Id) @ 25°C 5.5A, 4A Rds On (Max) @ Id, Vgs 30 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original FDC6561AN Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 95 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original NTMD4N03R2G Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original NTLJD3119CTBG Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.6A, 2.3A Rds On (Max) @ Id, Vgs 65 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id 1V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original FDS4897C Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 6.2A, 4.4A Rds On (Max) @ Id, Vgs 29 mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SI4936BDY-T1-E3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.9A Rds On (Max) @ Id, Vgs 35 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id 3V @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMC2020USD-13 Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.8A, 6.3A Rds On (Max) @ Id, Vgs 20 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.5V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SI5515CDC-T1-GE3 Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 36 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original NTGD4167CT1G Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.6A, 1.9A Rds On (Max) @ Id, Vgs 90 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id 1.5V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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